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零件编号 | IKP30N65H5 | ||
描述 | IGBT | ||
制造商 | Infineon | ||
LOGO | |||
1 Page
IGBT
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKP30N65H5
650VDuoPackIGBTanddiode
Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
IKP30N65H5
Highspeedswitchingseriesfifthgeneration
100 200
180
160
10
not for linear use
140
120
100
80
1
60
40
20
0.1
1 10 100 1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs.
RecommendeduseatVGE≥7.5V)
0
25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
60 90
80
50
70 VGE=18V
15V
40 60
12V
50 10V
30 8V
40
7V
20 30 6V
5V
20 4V
10
10
0
25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
0
012345
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
8 Rev.2.2,2014-12-04
IKP30N65H5
Highspeedswitchingseriesfifthgeneration
vGE(t)
90% VGE
IC(t)
vCE(t)
90% IC
10% IC
10% VGE
t
90% IC
10% IC
t
I,V
dIF/dt
ab
ab
dI
Figure C. Definition of diode switching
characteristics
t
vGE(t)
td(off)
tf
Figure A.
90% VGE
IC(t)
td(on)
tr
10% VGE
t
t
vCE(t)
2% IC
t
Eoff =
t1
t1
Figure B.
t2
VCE x IC x dt
t2
Eon =
t3
t3
t4
VCE x IC x dt
2% VCE
t4
t
Figure D.
CC
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Ls,
relief capacitor Cr,
(only for ZVT switching)
16 Rev.2.2,2014-12-04
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页数 | 17 页 | ||
下载 | [ IKP30N65H5.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
IKP30N65H5 | IGBT | Infineon |
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