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PDF ( 数据手册 , 数据表 ) SL1001

零件编号 SL1001
描述 Audio Frequency Power Amplifier
制造商 IK Semiconductor
LOGO IK Semiconductor LOGO 


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SL1001 数据手册, 描述, 功能
TECHNICAL DATA
Audio Frequency Power Amplifier
Features
Low Speed Switching
SOT-223
SL1001
Emitter Collector Base
123
SL1001
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Tc=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
- 40 V
VCEO
Collector-Emitter Voltage
- 30 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current (DC)
-3 A
ICP *Collector Current (Pulse)
-7 A
IB Base Current (DC)
- 0.6 A
PC
Collector Dissipation
(TC=25°C)
10 W
Rθja Junction to Ambient
132 °C/W
Rθjc Junction to Case
13.5 °C/W
TJ Junction Temperature
150 °C
TSTG
Storage Temperature
- 55 ~ 150
°C
* PW≤10ms, Duty Cycle≤50%
* Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these or any other conditions beyond those
indicated under “recommended operating conditions” is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Electrical Characteristics Tc=25°C unless otherwise noted
Characteristics
DC Current Gain (1), (2)
DC Current Gain (1), (2)
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Emitter Cut-off Current
Collector-Emitter
Saturation Voltage (1)
Base-Emitter
Saturation Voltage (1)
Symbol
hFE
hFE
Icbo
Icbo
Iebo
Iebo
Vce (sat)
Vbe (sat)
Unit
μA
μA
μA
μA
Measurement Mode
Vce =2V, Ic =20mA
Vce = 2V, Ic = 1A
Vcb = 30V, Ie = 0
Vcb = 40V, Ie = 0
Veb = 3V, Ic = 0
Veb = 5V, Ic = 0
Ic = 2 A, Ib = 0.2 A
Ic = 0.8 A, Ib = 0.02 A
Ic = 2 A, Ib = 0.2 A
(1) Pulse Test : Pulse Width 300. Duty Cycle 2%
(2) Measurement mode for a network with common base : Vcb = 1V, Ie=Ic
Min Max
30
60 400
1.0
100
1.0
100
0.5
0.1
2.0
2011, February, Rev. 01












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