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PDF ( 数据手册 , 数据表 ) CEB30N3

零件编号 CEB30N3
描述 N-Channel Enhancement Mode Field Effect Transistor
制造商 CET
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CEB30N3 数据手册, 描述, 功能
CEP30N3/CEB30N3
CEF30N3
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP30N3
CEB30N3
CEF30N3
VDSS
300V
300V
300V
RDS(ON)
110m
110m
110m
ID
30A
30A
30A e
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263
TO-220F
VDS 300
VGS ±30
ID 30 30 e
IDM f
120 120 e
227 74
PD 1.8 0.6
EAS
IAS
TJ,Tstg
450
30
-55 to 150
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.55
62.5
1.7
65
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.Dec
http://www.cetsemi.com












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