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零件编号 | CEB08N6A | ||
描述 | N-Channel Enhancement Mode Field Effect Transistor | ||
制造商 | CET | ||
LOGO | |||
1 Page
CEP08N6A/CEB08N6A
CEF08N6A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP08N6A
CEB08N6A
CEF08N6A
VDSS
600V
600V
600V
RDS(ON)
1.25Ω
1.25Ω
1.25Ω
ID
7.5A
7.5A
7.5A d
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
600
±30
7.5
5.2
30
150
1
7.5
5.2 d
30 d
48
0.3
Single Pulsed Avalanche Energy h
EAS 245
Single Pulsed Avalanche Current h
IAS 7
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1
62.5
3.1
65
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.Feb
http://www.cetsemi.com
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页数 | 4 页 | ||
下载 | [ CEB08N6A.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
CEB08N6A | N-Channel Enhancement Mode Field Effect Transistor | CET |
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