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PDF ( 数据手册 , 数据表 ) 6LN04MH

零件编号 6LN04MH
描述 N-Channel Silicon MOSFET
制造商 ON Semiconductor
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6LN04MH 数据手册, 描述, 功能
6LN04MH
Ordering number : ENA0458
6LN04MH
Features
1.5V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm20.8mm)
Ratings
60
±10
200
800
0.6
150
--55 to +150
Unit
V
V
mA
mA
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : FA
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=100mA
ID=100mA, VGS=4V
ID=50mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
60
0.4
280
Ratings
typ
max
Unit
V
1 µA
±10 µA
1.3 V
480 mS
2.2 2.9
2.4 3.4
3.5 7.0
26 pF
5.9 pF
3.2 pF
18.5
ns
26 ns
146 ns
69 ns
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
6LN04MH/D












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