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零件编号 | VEC2315 | ||
描述 | Power MOSFET ( Transistor ) | ||
制造商 | ON Semiconductor | ||
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1 Page
VEC2315
Power MOSFET
–60V, 137mΩ, –2.5A, Dual P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
Low On-Resistance
4V drive
Low-Profile Package
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Motor Driver
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
60 V
Gate to Source Voltage
VGSS
20 V
Drain Current (DC)
ID 2.5 A
Drain Current (Pulse)
PW 10s, duty cycle 1%
IDP
10 A
Power Dissipation
When mounted on ceramic substrate
(900mm2 0.8mm) 1unit
Total Dissipation
When mounted on ceramic substrate
(900mm2 0.8mm)
PD
PT
0.9 W
1.0 W
Junction Temperature
Tj 150 C
Storage Temperature
Tstg
55 to +150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm2 0.8mm) 1unit
Symbol
RJA
Value
Unit
138.8 C/W
www.onsemi.com
VDSS
60V
RDS(on) Max
137mΩ@ 10V
180mΩ@ 4.5V
194mΩ@ 4V
ID Max
2.5A
ELECTRICAL CONNECTION
P-Channel
8765
1234
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
PACKING TYPE : TL
MARKING
UM
LOT No.
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
October 2015 - Rev. 1
1
Publication Order Number :
VEC2315/D
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页数 | 5 页 | ||
下载 | [ VEC2315.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
VEC2315 | Power MOSFET ( Transistor ) | ON Semiconductor |
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