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零件编号 | N01S818HA | ||
描述 | 1 Mb Ultra-Low Power Serial SRAM | ||
制造商 | ON Semiconductor | ||
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N01S818HA
1 Mb Ultra-Low Power
Serial SRAM
Standard SPI Interface and Multiplex
DUAL and QUAD Interface
Overview
The ON Semiconductor serial SRAM family includes several
integrated memory devices including this 1 Mb serially accessed
Static Random Access Memory, internally organized as 128 K words
by 8 bits. The devices are designed and fabricated using
ON Semiconductor’s advanced CMOS technology to provide both
high-speed performance and low power. The devices operate with a
single chip select (CS) input and use a simple Serial Peripheral
Interface (SPI) protocol. In SPI mode, a single data-in (SI) and
data-out (SO) line is used along with the clock (SCK) to access data
within the device. In DUAL mode, two multiplexed data-in/data-out
(SIO0-SIO1) lines are used and in QUAD mode, four multiplexed
data-in/data-out (SIO0-SIO3) lines are used with the clock to access
the memory.
The devices can operate over a wide temperature range of −40°C to
+85°C and are available in a 8-lead TSSOP package.
Features
• Power Supply Range: 1.7 to 2.2 V
• Very Low Typical Standby Current < 1 mA
• Very Low Operating Current < 10 mA
• Simple Serial Interface
♦ Single-bit SPI Access
♦ DUAL-bit and QUAD-bit SPI-like Access
• Flexible Operating Modes
♦ Word Mode
♦ Page Mode
♦ Burst Mode (Full Array)
• High Frequency Read and Write Operation
♦ Clock Frequency 20 MHz
• Built-in Write Protection (CS High)
• High Reliability
♦ Unlimited Write Cycles
• These Devices are Pb−Free and are RoHS Compliant
♦ Green TSSOP
http://onsemi.com
TSSOP8 3x4.4
CASE 948BH
PACKAGE CONFIGURATION
CS
SO / SIO1
NC / SIO2
VSS
1
2
3
4
8 VCC
7 HOLD / SIO3
6 SCK
5 SI / SIO0
ORDERING INFORMATION
Device
Package
Shipping†
N01S818HAT22I TSSOP−8
(Pb−Free)
N01S818HAT22IT TSSOP−8
(Pb−Free)
100 Units / Tube
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Table 1. DEVICE OPTIONS
Device / Part Number
N01S818HAT22I
Power Supply
1.7 V − 2.2 V
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 0
Speed
20 MHz
1
Package
TSSOP−8
Function
HOLD
Publication Order Number:
N01S818HA/D
N01S818HA
CS
SCK
0123
SIO[3:0]
Instruction Mode Bits
C1 C0 H L
MSB
Notes: C[1:0] = 01h
Figure 14. QUAD Write Mode Register Sequence
Table 5. MODE REGISTER
Bit Function
0 Hold Function
1 = Hold function disabled
0 = Hold function enabled (Default)
1 Reserved
2 Reserved
3 Reserved
4 Reserved
5 Reserved
6 Operating Mode
Bit 7
Bit 6
0 0 = Word Mode
7 1 0 = Page Mode
0 1 = Burst Mode (Default)
1 1 = Reserved
Power-Up State
The serial SRAM enters a know state at power-up time.
The device is in low-power standby state with CS = 1. A low
level on CS is required to enter a active state.
Table 6. ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Rating
Units
Voltage on any pin relative to VSS
VIN,OUT
–0.3 to VCC +0.3
V
Voltage on VCC Supply Relative to VSS
VCC –0.3 to 5.5
V
Power Dissipation
PD 500 mW
Storage Temperature
TSTG
–40 to 125
°C
Operating Temperature
TA
-40 to +85
°C
Soldering Temperature and Time
TSOLDER
260°C, 10 sec
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 7. OPERATING CHARACTERISTICS (OVER SPECIFIED TEMPERATURE RANGE)
Item
Symbol
Test Conditions
Min
Supply Voltage
VCC
1.7
Data Retention Voltage (Note 2)
VDR
Input High Voltage
VIH
0.7 VCC
Input Low Voltage
VIL
−0.3
Output High Voltage
VOH
IOH = −0.4 mA
VCC − 0.2
Output Low Voltage
VOL IOL = 1 mA
Input Leakage Current
ILI CS = VCC, VIN = 0 to VCC
Output Leakage Current
ILO CS = VCC, VOUT = 0 to VCC
Operating Current
ICC f = 20 MHz, IOUT = 0, SPI / DUAL
f = 20 MHz, IOUT = 0, QUAD
Standby Current
ISB CS = VCC, VIN = VSS or VCC
1. Typical values are measured at VCC = VCC Typ., TA = 25°C and are not 100% tested.
2. Typical lower limit of VCC when data will be retained in the memory array, not 100% tested.
Typ (Note 1)
1.0
1
Max
2.2
VCC + 0.3
0.2 VCC
0.2
1.0
1.0
10
10
5
Units
V
V
V
V
V
mA
mA
mA
mA
http://onsemi.com
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页数 | 12 页 | ||
下载 | [ N01S818HA.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
N01S818HA | 1 Mb Ultra-Low Power Serial SRAM | ON Semiconductor |
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