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PDF ( 数据手册 , 数据表 ) B1100W-S

零件编号 B1100W-S
描述 1A Surface Mount Schottky Barrier Rectifiers
制造商 CITC
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B1100W-S 数据手册, 描述, 功能
B120W-S THRU B1200W-S
1A Surface Mount Schottky Barrier Rectifiers
Features
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Suffix "G" indicates Halogen-free part, ex.B120WG-S.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Outline
SOD-123S
0.039(1.0)
0.031(0.8)
0.154(3.9)
0.138(3.5)
0.016(0.4) Typ.
Marking code
0.079(2.0)
0.063(1.6)
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123S
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity : Indicated by cathode band
Weight : Approximated 0.018 gram
0.031(0.8) Typ.
0.055(1.4)
0.039(1.0)
0.031 (0.8) Typ.
Dimensions in inches and (millimeters)
Maximum ratings and electrical characteristics
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Forward rectified current
Forward surge current
Reverse current
Diode junction capacitance
Thermal resistance
Storage temperature
Conditions
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
VR = VRRM TA = 25OC
VR = VRRM TA = 100OC
f=1MHz and applied 4V DC reverse voltage
Junction to ambient
Symbol
IO
IFSM
IR
CJ
RθJA
TSTG
MIN.
-55
TYP.
120
88
MAX.
1.0
30
0.1
20
+175
UNIT
A
A
mA
pF
OC/W
OC
Symbol
B120W-S
B140W-S
B160W-S
B1100W-S
B1150W-S
B1200W-S
Max.
Marking code
repetitive peak
reverse voltage
VRRM (V)
12 20
14 40
16 60
10 100
115 150
120 200
Max.
RMS voltage
VRMS (V)
14
28
42
70
105
140
Max. DC
blocking voltage
VR (V)
20
40
60
100
150
200
Max. forward voltage
@1A, TA = 25OC
VF (V)
0.45
0.50
0.70
0.81
0.87
0.90
Operating temperature
TJ (OC)
-55 ~ +150
-55 ~ +175
Document ID : DS-12K3V
1 Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C1












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