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零件编号 | STP6N120K3 | ||
描述 | N-channel MOSFET | ||
制造商 | STMicroelectronics | ||
LOGO | |||
1 Page
STFW6N120K3, STP6N120K3,
STW6N120K3
N-channel 1200 V, 1.95 Ω typ., 6 A SuperMESH3™
Power MOSFET in TO-3PF, TO-220 and TO-247 packages
Datasheet — production data
Features
Order codes
VDSS
RDS(on)
max
ID
Ptot
STFW6N120K3 1200 V < 2.4 Ω 6 A 63 W
STP6N120K3 1200 V < 2.4 Ω 6 A 150 W
STW6N120K3 1200 V < 2.4 Ω 6 A 150 W
■ 100% avalanche tested
■ Extremely large avalanche performance
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Zener-protected
Applications
■ Switching applications
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
3
2
1
TO-3PF
TAB
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
STFW6N120K3
STP6N120K3
STW6N120K3
Marking
6N120K3
Package
TO-3PF
TO-220
TO-247
Packaging
Tube
November 2012
This is information on a product in full production.
Doc ID 15572 Rev 3
1/17
www.st.com
17
Electrical characteristics
STFW6N120K3, STP6N120K3, STW6N120K3
Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on-resistance vs
temperature
6'3
6
6$3
!-V
6$3
6
RDS(on)
(Ω)
2.5
VGS=10V
AM079071v1
2
1.5
1
0.5
1GN#
0
-75 -25 25 75 125 TJ(°C)
Figure 16. Normalized gate threshold voltage Figure 17. Maximum avalanche energy vs
vs temperature
temperature
6'3TH
NORM
!-V
%!3
M*
!-V
4* #
4* #
Figure 18. Source-drain diode forward
characteristics
63$
6
4*
#
!-V
4* #
4*
#
)3$!
8/17 Doc ID 15572 Rev 3
Revision history
5 Revision history
STFW6N120K3, STP6N120K3, STW6N120K3
Table 12. Document revision history
Date
Revision
Changes
15-Apr-2009
02-Aug-2010
14-Nov-2012
1 First release.
2
Document status promoted from preliminary data to datasheet.
Inserted Section 2.1: Electrical characteristics (curves).
Figure 13: Capacitance variations and Figure 14: Gate charge vs
3 gate-source voltage have been corrected.
Minor text changes.
16/17
Doc ID 15572 Rev 3
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页数 | 17 页 | ||
下载 | [ STP6N120K3.PDF 数据手册 ] |
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