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零件编号 | STD15N65M5 | ||
描述 | N-channel Power MOSFET | ||
制造商 | STMicroelectronics | ||
LOGO | |||
1 Page
STB15N65M5,
STD15N65M5
N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET
in D2PAK and DPAK packages
Datasheet — production data
Features
Order codes
STB15N65M5
STD15N65M5
VDS @
TJmax
RDS(on)
max
ID
710 V < 0.34 Ω 11 A
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
TAB
2
1
D2PAK
3
TAB
3
1
DPAK
Figure 1. Internal schematic diagram
$ 4!"
'
3
!-V
Table 1. Device summary
Order codes
STB15N65M5
STD15N65M5
Marking
15N65M5
Package
D2PAK
DPAK
Packaging
Tape and reel
November 2012
This is information on a product in full production.
Doc ID 023207 Rev 1
1/19
www.st.com
19
Electrical characteristics
STB15N65M5, STD15N65M5
Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized BVDSS vs temperature
VSD
(V) TJ=-50°C
1.2
1.0
AM05461v1
VDS
(norm)
1.08
1.06
1.04
ID = 1mA
AM10399v1
0.8
0.6
TJ=150°C
0.4
0.2
TJ=25°C
0
0 10 20 30 40 50 ISD(A)
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25
0
25 50 75 100 TJ(°C)
Figure 16. Switching losses vs gate resistance
(1)
E (μJ)
120
VDD=400V
VGS=10V
ID=7A
100
Eon
AM15292v1
80
60
40 Eoff
20
0
0 10 20 30 40
1. Eon including reverse recovery of a SiC diode
50 RG(Ω)
8/19 Doc ID 023207 Rev 1
Packaging mechanical data
STB15N65M5, STD15N65M5
Table 12. DPAK (TO-252) tape and reel mechanical data
Tape
Reel
Dim.
A0
B0
B1
D
D1
E
F
K0
P0
P1
P2
R
T
W
mm
Min. Max.
6.8 7
10.4 10.6
12.1
1.5 1.6
1.5
1.65 1.85
7.4 7.6
2.55 2.75
3.9 4.1
7.9 8.1
1.9 2.1
40
0.25 0.35
15.7 16.3
Dim.
A
B
C
D
G
N
T
Min.
mm
1.5
12.8
20.2
16.4
50
Base qty.
Bulk qty.
Max.
330
13.2
18.4
22.4
2500
2500
16/19
Doc ID 023207 Rev 1
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页数 | 19 页 | ||
下载 | [ STD15N65M5.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
STD15N65M5 | N-channel Power MOSFET | STMicroelectronics |
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