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零件编号 | STP100N10F7 | ||
描述 | N-channel Power MOSFET | ||
制造商 | STMicroelectronics | ||
LOGO | |||
1 Page
STB100N10F7, STD100N10F7,
STF100N10F7, STP100N10F7
N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET™ VII DeepGATE™
2
Power MOSFET in D PAK, DPAK, TO-220FP and TO-220
Datasheet - production data
TAB
3
1
D2PAK
TAB
3
1
DPAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
Figure 1. Internal schematic diagram
'Ć7$%
*
Features
Order codes V
DS
RDS(on)
max
STB100N10F7
STD100N10F7
100 V 0.008 Ω
STF100N10F7
STP100N10F7
• Ultra low on-resistance
• 100% avalanche tested
IP
D TOT
80 A
80 A
45 A
80A
120 W
120W
30 W
150 W
Applications
• Switching applications
Description
th
These devices utilize the 7 generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
6
$0Y
Order codes
STB100N10F7
STD100N10F7
STF100N10F7
STP100N10F7
Table 1. Device summary
Marking
Packages
2
D PAK
100N10F7
DPAK
TO-220FP
TO-220
November 2013
This is information on a product in full production.
DocID023737 Rev 4
Packaging
Tape and reel
Tape and reel
Tube
Tube
1/23
www.st.com
23
Electrical characteristics
STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7
Figure 14. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
AM15746v1
1.04
1.02
ID= 250 µA
1
0.98
0.96
0.94
0.92
-55 -30 -5 20 45 70 95 120 TJ(°C)
Figure 16. Source-drain diode forward
characteristics
VSD (V)
AM15749v1
1.1 TJ=-55°C
1
0.9 TJ=25°C
0.8
0.7 TJ=150°C
0.6
0.5
0 20 40 60 80 100 ISD(A)
Figure 15. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2
ID=40A
AM15760v1
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-55 -30 -5
20 45 70 95 120
TJ(°C)
8/23 DocID023737 Rev 4
Package mechanical data
STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7
Figure 27. TO-220FP drawing
16/23
DocID023737 Rev 4
7012510_Rev_K_B
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页数 | 23 页 | ||
下载 | [ STP100N10F7.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
STP100N10F7 | N-channel Power MOSFET | STMicroelectronics |
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