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零件编号 | STP10N62K3 | ||
描述 | N-channel Power MOSFET | ||
制造商 | STMicroelectronics | ||
LOGO | |||
1 Page
STF10N62K3, STFI10N62K3,
STI10N62K3, STP10N62K3
N-channel 620 V, 0.68 Ω typ., 8.4 A SuperMESH3™
Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages
Datasheet − production data
Features
Type
VDSS
RDS(on)
max
ID
Pw
STF10N62K3
STFI10N62K3
STI10N62K3
STP10N62K3
620 V
< 0.75 Ω
8.4 A(1)
8.4 A
30 W
125 W
1. Limited by package
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Applications
■ Switching applications
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
Table 1. Device summary
Order codes
Marking
STF10N62K3
STFI10N62K3
STI10N62K3
STP10N62K3
10N62K3
10N62K3
10N62K3
10N62K3
3
2
1
TO-220FP
1
23
I²PAKFP
TAB
TAB
123
I²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
'7$%
*
6
AM01476v1
Package
TO-220FP
I²PAKFP
I²PAK
TO-220
Packaging
Tube
September 2012
This is information on a product in full production.
Doc ID 15640 Rev 4
1/17
www.st.com
17
Electrical characteristics
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
Figure 14. Normalized gate threshold voltage Figure 15. Maximum avalanche energy vs
vs temperature
temperature
VGS(th)
(norm)
1.10
1.00
AM03918v1
ID = 100 µA
0.90
0.80
0.70
-50 -25 0 25 50 75 100 125 150 TJ(°C)
EAS
(mJ)
220
200
180
160
140
120
100
80
60
40
20
0
0
20 40
ID=8 A
VDD=50 V
AM03921v1
60 80 100 120 140 TJ(°C)
Figure 16. Source-drain diode forward
characteristics
VSD
(V)
0.9
TJ=-50°C
AM03920v1
0.8
TJ=25°C
0.7
0.6
0.5 TJ=150°C
0.4
0.3
0 10 20 30 40 50 60 70 80 ISD(A)
8/17 Doc ID 15640 Rev 4
Revision history
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
5 Revision history
Table 13. Document revision history
Date
Revision
Changes
08-Jun-2009
22-Jun-2009
06-Aug-2012
13-Sep-2012
1 First release.
2 Added new package, mechanical data: I²PAK
Added package, mechanical data: I²PAKFP
3
Updated Table 1: Device summary, Table 2: Absolute maximum
ratings, Table 3: Thermal data, Table 4: On /off states.
Minor text changes.
4 Changed value in the title from 3.8 A to 8.4 A.
16/17
Doc ID 15640 Rev 4
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页数 | 17 页 | ||
下载 | [ STP10N62K3.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
STP10N62K3 | N-channel Power MOSFET | STMicroelectronics |
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