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PDF ( 数据手册 , 数据表 ) RW1E014SN

零件编号 RW1E014SN
描述 4V Drive Nch MOSFET
制造商 ROHM Semiconductor
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RW1E014SN 数据手册, 描述, 功能
4V Drive Nch MOSFET
RW1E014SN
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance, High speed switching.
2) Built-in G-S Protection Diode.
3) Space Saving, Small Surface Mount Package (WEMT6).
zApplications
Switching
zDimensions (Unit : mm)
WEMT6
(6) (5) (4)
(1) (2) (3)
Abbreviated symbol : PN
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RW1E014SN
Taping
T2R
8000
zInner circuit
(6) (5)
2
(4)
1
(1) (2)
1 ESD PROTECTION DIODE
2 BODY DIODE
(3)
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
1 Pw10µs, Duty cycle1%
2 When mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
30
±20
±1.4
±2.8
0.5
2.8
0.7
150
55 to +150
zThermal resistance
Parameter
Channel to ambient
When mounted on a ceramic board
Symbol
Rth (ch-a)
Limits
179
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C / W
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1/4
2009.06 - Rev.A












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