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零件编号 | QS8K2 | ||
描述 | 30V Nch +Nch Middle Power MOSFET | ||
制造商 | ROHM Semiconductor | ||
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QS8K2
30V Nch +Nch Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
54mΩ
±3.5A
1.5W
lFeatures
1) Low on - resistance.
2) Built-in G-S protection diode.
3) Small surface mount package(TSMT8)
4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
lInner circuit
Datasheet
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
180
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TR
Marking
K02
lAbsolute maximum ratings (Ta = 25°C) <It is the same ratings for the Tr1 and Tr2>
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
VDSS
30 V
ID ±3.5 A
ID,pulse*1
±12
A
VGSS
±12 V
Power dissipation
total
element
PD*2
1.5
1.25 W
total PD*3 0.7
Junction temperature
Tj 150 ℃
Range of storage temperature
Tstg
-55 to +150
℃
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150730 - Rev.001
QS8K2
lElectrical characteristic curves
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current (II)
Datasheet
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current (IlI)
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current (IV)
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
8/11
20150730 - Rev.001
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页数 | 12 页 | ||
下载 | [ QS8K2.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
QS8K2 | 30V Nch +Nch Middle Power MOSFET | ROHM Semiconductor |
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