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PDF ( 数据手册 , 数据表 ) R5011FNX

零件编号 R5011FNX
描述 Nch 500V 11A Power MOSFET
制造商 ROHM Semiconductor
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R5011FNX 数据手册, 描述, 功能
R5011FNX
Nch 500V 11A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
500V
0.52W
11A
50W
lOutline
TO-220FM
(1)(2)(3)
lFeatures
1) Fast reverse recovery time (trr).
lInner circuit
2) Low on-resistance.
3) Fast switching speed.
(1) Gate
(2) Drain
(3) Source
4) Gate-source voltage (VGSS) guaranteed to be 30V.
5) Drive circuits can be simple.
*1 Body Diode
6) Parallel use is easy.
7) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Bulk
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
-
500
-
Marking
R5011FNX
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAR *3
PD
Tj
Tstg
dv/dt *5
Value
500
11
5.4
44
30
8.1
3.5
5.5
50
150
-55 to +150
15
Unit
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/13
2012.07 - Rev.B







R5011FNX pdf, 数据表
R5011FNX
lElectrical characteristic curves
Data Sheet
Fig.11 Breakdown Voltage
vs. Junction Temperature
700
650
600
550
500
-50 0 50 100 150
Junction Temperature : Tj [°C]
Fig.12 Typical Transfer Characteristics
100
VDS= 10V
Pulsed
10
Ta = 125ºC
1 Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
0.1
0.01
0.001
0.0 1.5 3.0 4.5 6.0
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage
vs. Junction Temperature
6
VDS= 10V
5 ID=1mA
4
3
2
1
0
-50 0 50 100 150
Junction Temperature : Tj [°C]
Fig.14 Transconductance vs. Drain Current
100
VDS= 10V
Pulsed
10
1
Ta = -25ºC
Ta = 25ºC
Ta = 75ºC
0.1 Ta = 125ºC
0.01
0.01
0.1 1 10
Drain Current : ID [A]
100
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
8/13
2012.07 - Rev.B














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