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PDF ( 数据手册 , 数据表 ) R6006ANX

零件编号 R6006ANX
描述 Nch 600V 6A Power MOSFET
制造商 ROHM Semiconductor
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R6006ANX 数据手册, 描述, 功能
R6006ANX
Nch 600V 6A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
600V
1.2W
6A
40W
lOutline
TO-220FM
(1)(2)(3)
lFeatures
1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packing
Bulk
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
-
500
-
Marking
R6006ANX
lAbsolute maximum ratings (Ta = 25C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25C
Tc = 100C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAR *3
PD
Tj
Tstg
dv/dt *5
600
6
2.9
24
30
2.4
1.9
3
40
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
C
C
V/ns
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/13
2012.01 - Rev.B







R6006ANX pdf, 数据表
R6006ANX
lElectrical characteristic curves
Data Sheet
Fig.11 Breakdown Voltage
vs. Junction Temperature
900
850
800
750
700
650
600
550
500
-50
0 50 100 150
Junction Temperature : Tj [°C]
Fig.12 Typical Transfer Characteristics
100
VDS = 10V
Pulsed
10
1
0.1
0.01
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.001
0
2468
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage
vs. Junction Temperature
6
VDS = 10V
5 ID = 1mA
4
3
2
1
0
-50 0 50 100 150
Junction Temperature : Tj [°C]
Fig.14 Transconductance vs. Drain Current
100
10
VDS = 10V
Pulsed
1
0.1
0.01
Ta = -25ºC
Ta = 25ºC
Ta = 75ºC
Ta = 125ºC
0.001
0.001
0.01 0.1
1
Drain Current : ID [A]
10
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
8/13
2012.01 - Rev.B














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