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PDF ( 数据手册 , 数据表 ) R5016ANX

零件编号 R5016ANX
描述 Nch 500V 16A Power MOSFET
制造商 ROHM Semiconductor
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R5016ANX 数据手册, 描述, 功能
R5016ANX
  Nch 500V 16A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
500V
0.27Ω
±16A
50W
lOutline
TO-220FM
 
 
      
      
 
 
 
      
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed
  to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Bulk
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
-
500
Taping code
-
Marking
R5016ANX
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
TC = 25°C
TC = 100°C
VDSS
ID*1
ID*1
ID,pulse*2
VGSS
EAS*3
EAR*4
IAR*3
PD
Tj
Tstg
dv/dt
500
±16
±7.8
±64
±30
17
3.5
8
50
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
V/ns
                                                                                        
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/13
20131113 - Rev.001    







R5016ANX pdf, 数据表
R5016ANX
      
lElectrical characteristic curves
Fig.11 Breakdown Voltage vs.        
 Junction Temperature
        
Datasheet
Fig.12 Typical Transfer Characteristics
Fig.13 Gate Threshold Voltage vs.
 Junction Temperature
Fig.14 Transconductance vs. Drain Current
                                                                                          
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
8/13
20131113 - Rev.001














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