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零件编号 | R5013ANX | ||
描述 | 10V Drive Nch MOSFET | ||
制造商 | ROHM Semiconductor | ||
LOGO | |||
1 Page
Transistors
10V Drive Nch MOSFET
R5013ANX
R5013ANX
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (VGSS)
guaranteed to be r30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
zDimensions (Unit : mm)
TO-220FM
10.0 φ3.2
4.5
2.8
(1)Base
(2)Collector
(3)Emitter
1.2
1.3
0.8
2.54 2.54
(1) (2) (3)
0.75
2.6
zApplications
Switching
zPackaging specifications
Package
Code
Type Basic ordering unit (pieces)
R5013ANX
Bulk
−
500
zInner circuit
zAbsolute maximum ratings (Ta=25qC)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
500
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
VGSS
ID
IDP
IS
ISP
∗3
∗1
∗3
∗1
±30
±13
±52
13
52
Avalanche Current
IAS ∗2
13
Avalanche Energy
EAS ∗2
46
Total power dissipation (Tc=25°C)
PD
50
Channel temperature
Tch 150
Range of storage temperature
Tstg
∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum tempterature allowed
−55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
2.5
(1)
(1) Gate
(2) Drain
(3) Source
Unit
°C/W
∗1
(2) (3)
∗1 Body Diode
Rev.A
1/5
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页数 | 6 页 | ||
下载 | [ R5013ANX.PDF 数据手册 ] |
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