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PDF ( 数据手册 , 数据表 ) R5019ANJ

零件编号 R5019ANJ
描述 10V Drive Nch MOSFET
制造商 ROHM Semiconductor
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R5019ANJ 数据手册, 描述, 功能
Data Sheet
10V Drive Nch MOSFET
R5019ANJ
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
Dimensions (Unit : mm)
LPTS
TO-263(D2PAK)
10.1
4.5 1.3
(1) Gate
(2) Drain
(3) Source
1.24
2.54 0.78
5.08
(1) (2) (3)
0.4
2.7
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
R5019ANJ
Taping
TL
1000
Inner circuit
1
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
IAS *2
EAS *2
PD *4
Tch
Tstg
500
30
19
76
19
76
9.5
24.3
100
150
55 to 150
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25C
*3 Limited only by maximum temperature allowed.
*4 TC=25C
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
1.25
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 BODY DIODE
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© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.10 - Rev.A












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