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PDF ( 数据手册 , 数据表 ) R5016ANJ

零件编号 R5016ANJ
描述 Nch 500V 16A Power MOSFET
制造商 ROHM Semiconductor
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R5016ANJ 数据手册, 描述, 功能
R5016ANJ
  Nch 500V 16A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
500V
0.27Ω
±16A
100W
lOutline
LPT(S)
SC-83
TO-263
      
      
 
 
 
      
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed
  to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type Tape width (mm)
Basic ordering unit (pcs)
24
1000
Taping code
TL
Marking
R5016ANJ
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
TC = 25°C
TC = 100°C
VDSS
ID*1
ID*1
ID,pulse*2
VGSS
EAS*3
EAR*4
IAR*3
PD
Tj
Tstg
500
±16
±7.8
±64
±30
18
6.7
8
100
150
-55 to +150
V
A
A
A
V
mJ
mJ
A
W
Reverse diode dv/dt
dv/dt 15 V/ns
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/13
20150730 - Rev.001    







R5016ANJ pdf, 数据表
R5016ANJ
      
lElectrical characteristic curves
Fig.11 Breakdown Voltage vs.        
 Junction Temperature
        
Datasheet
Fig.12 Typical Transfer Characteristics
Fig.13 Gate Threshold Voltage vs.
 Junction Temperature
Fig.14 Transconductance vs. Drain Current
                                                                                          
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
8/13
20150730 - Rev.001














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