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零件编号 | R5011ANJ | ||
描述 | Nch 500V 11A Power MOSFET | ||
制造商 | ROHM Semiconductor | ||
LOGO | |||
1 Page
R5011ANJ
Nch 500V 11A Power MOSFET
Datasheet
VDSS
RDS(on)(Max.)
ID
PD
500V
0.5Ω
±11A
75W
lOutline
LPT(S)
SC-83
TO-263
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed
to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type Tape width (mm)
Basic ordering unit (pcs)
24
1000
Taping code
TL
Marking
R5011ANJ
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
TC = 25°C
TC = 100°C
VDSS
ID*1
ID*1
ID,pulse*2
VGSS
EAS*3
EAR*4
IAR*3
PD
Tj
Tstg
500
±11
±5.3
±44
±30
8.1
6.5
5.5
75
150
-55 to +150
V
A
A
A
V
mJ
mJ
A
W
℃
℃
Reverse diode dv/dt
dv/dt 15 V/ns
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/13
20150730 - Rev.002
R5011ANJ
lElectrical characteristic curves
Fig.11 Breakdown Voltage vs.
Junction Temperature
Datasheet
Fig.12 Typical Transfer Characteristics
Fig.13 Gate Threshold Voltage vs.
Junction Temperature
Fig.14 Transconductance vs. Drain Current
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
8/13
20150730 - Rev.002
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页数 | 14 页 | ||
下载 | [ R5011ANJ.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
R5011ANJ | Nch 500V 11A Power MOSFET | ROHM Semiconductor |
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