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零件编号 | RZQ050P01 | ||
描述 | Pch -12V -5A Power MOSFET | ||
制造商 | ROHM Semiconductor | ||
LOGO | |||
1 Page
RZQ050P01
Pch -12V -5A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
-12V
26mW
-5A
1.25W
lFeatures
1) Low on - resistance.
2) -1.5V Drive.
3) Built-in G-S Protection Diode.
4) Small Surface Mount Package (TSMT6).
5) Pb-free lead plating ; RoHS compliant
lApplication
DC/DC converters
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
lOutline
TSMT6
SOT-457T
(6)
(5)
(4)
(1)
(2)
(3)
lInner circuit
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
180
8
3,000
TR
YF
Symbol
VDSS
ID *1
ID,pulse *2
VGSS
PD *3
PD *4
Tj
Tstg
Value
-12
5
20
10
1.25
0.6
150
-55 to +150
Unit
V
A
A
V
W
W
°C
°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.10 - Rev.B
RZQ050P01
lElectrical characteristic curves
Data Sheet
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
1000
VGS= -4.5V
Pulsed
Ta=125ºC
Ta=75ºC
100 Ta=25ºC
Ta= -25ºC
Fig.16 Static Drain-Source On-State
Resistance vs. Drain Current(III)
1000
VGS= -2.5V
Pulsed
100
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
10 10
1
0.1
1
Drain Current : -ID [A]
10
1
0.1
1
Drain Current : -ID [A]
10
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
1000
VGS= -1.8V
Pulsed
100
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
Fig.18 Static Drain - Source On - State
Resistance vs. Drain Current(V)
1000
VGS= -1.5V
Pulsed
100
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
10 10
1
0.1
1
Drain Current : -ID [A]
10
1
0.1
1
Drain Current : -ID [A]
10
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
8/11
2012.10 - Rev.B
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页数 | 12 页 | ||
下载 | [ RZQ050P01.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
RZQ050P01 | Pch -12V -5A Power MOSFET | ROHM Semiconductor |
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