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零件编号 | RUF020N02 | ||
描述 | Nch 20V 2.0A Power MOSFET | ||
制造商 | ROHM Semiconductor | ||
LOGO | |||
1 Page
RUF020N02
Nch 20V 2.0A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
20V
105mW
2A
0.8W
lFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TUMT3).
4) Pb-free lead plating ; RoHS compliant
lApplication
DC/DC converters
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
lOutline
TUMT3
SOT-323T
(1)
(2)
lInner circuit
(3)
(1) Gate
(2) Source
(3) Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
180
8
3,000
TL
XK
Symbol
VDSS
ID *1
ID,pulse *2
VGSS
PD *3
PD *4
Tj
Tstg
Value
20
2
6
10
0.8
0.32
150
-55 to +150
Unit
V
A
A
V
W
W
°C
°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/11
2013.02 - Rev.B
RUF020N02
lElectrical characteristic curves
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
1000
VGS= 4.5V
Pulsed
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
100
Data Sheet
Fig.16 Static Drain-Source On-State
Resistance vs. Drain Current(III)
1000
VGS= 2.5V
Pulsed
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
100
10
0.01
0.1 1
Drain Current : ID [A]
10
10
0.01
0.1 1
Drain Current : ID [A]
10
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
1000
VGS= 1.8V
Pulsed
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
100
Fig.18 Static Drain - Source On - State
Resistance vs. Drain Current(V)
1000
VGS= 1.5V
Pulsed
100
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
10
0.01
0.1 1
Drain Current : ID [A]
10
10
0.01
0.1 1
Drain Current : ID [A]
10
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
8/11
2013.02 - Rev.B
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页数 | 12 页 | ||
下载 | [ RUF020N02.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
RUF020N02 | Nch 20V 2.0A Power MOSFET | ROHM Semiconductor |
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