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零件编号 | SP8K33FRA | ||
描述 | 4V Drive Nch+Nch MOSFET | ||
制造商 | ROHM Semiconductor | ||
LOGO | |||
1 Page
Transistors
4V Drive Nch+Nch MOSFET
SP8K33 FRA
SP8SKP383KF3R3A
AEC-Q101 Qualified
zStructure
Silicon N-channel MOSFET
zDimensions (Unit : mm)
SOP8
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small surface Mount Package (SOP8).
zApplication
Switching
Each lead has same dimensions
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SPS8PK8K33F3RA
Taping
TB
2500
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw 10µs, Duty cycle 1%
∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
60
±20
±5.0
±20
1.0
20
2.0
150
−55 to +150
zInner circuit
(8) (7)
(6) (5) (8) (7) (6) (5)
∗2 ∗2
(1) (2) (3) (4)
∗1 ∗1
(1) (2)
(3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Unit
V
V
A
A
A
A
W/TOTAL
°C
°C
1/4
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页数 | 7 页 | ||
下载 | [ SP8K33FRA.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
SP8K33FRA | 4V Drive Nch+Nch MOSFET | ROHM Semiconductor |
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