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PDF ( 数据手册 , 数据表 ) AO4404

零件编号 AO4404
描述 N-Channel MOSFET
制造商 Alpha & Omega Semiconductors
LOGO Alpha & Omega Semiconductors LOGO 


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AO4404 数据手册, 描述, 功能
AO4404
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4404/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be used
to bypass the source inductance. AO4404 and
AO4404L are electrically identical.
-RoHS Compliant
-AO4404L is Halogen Free
Features
VDS (V) = 30V
ID = 8.5A (VGS = 10V)
RDS(ON) < 24m(VGS = 10V)
RDS(ON) < 30m(VGS = 4.5V)
RDS(ON) < 48m(VGS = 2.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
SD
SD
SD
GD
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation TA=70°C
Avalanche Current B
Repetitive avalanche energy 0.3mH B
PD
IAR
EAR
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
8.5
7.1
60
3
2.1
15
34
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AF
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com












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