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PDF ( 数据手册 , 数据表 ) NP109N04PUG

零件编号 NP109N04PUG
描述 N-CHANNEL POWER MOS FET
制造商 Renesas
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NP109N04PUG 数据手册, 描述, 功能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP109N04PUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
NP109N04PUG-E1-AY Note
NP109N04PUG-E2-AY Note
Pure Sn (Tin)
Tape 800 p/reel
Note Pb-free (This product does not contain Pb in external electrode).
PACKAGE
TO-263 (MP-25ZP) typ. 1.5 g
FEATURES
Super low on-state resistance
RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A)
High current rating ID(DC) = ±110 A
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±110
±440
Total Power Dissipation (TC = 25°C)
PT1
220
Total Power Dissipation (TA = 25°C)
PT2
1.8
Channel Temperature
Tch 175
Storage Temperature
Tstg 55 to +175
Repetitive Avalanche Current Note2
IAR
60
Repetitive Avalanche Energy Note2
EAR
360
Notes 1. PW 10 μs, Duty Cycle 1%
2. Tch 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.68
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18590EJ2V0DS00 (2nd edition)
Date Published December 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007







NP109N04PUG pdf, 数据表
NP109N04PUG
The information in this document is current as of December, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
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property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
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(Note)
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defined above).
M8E 02. 11-1














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