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PDF ( 数据手册 , 数据表 ) FDZ192NZ

零件编号 FDZ192NZ
描述 N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET
制造商 Fairchild Semiconductor
LOGO Fairchild Semiconductor LOGO 


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FDZ192NZ 数据手册, 描述, 功能
January 2010
FDZ192NZ
N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
20 V, 5.3 A, 39 m
Features
„ Max rDS(on) = 39 mat VGS = 4.5 V, ID = 2.0 A
„ Max rDS(on) = 43 mat VGS = 2.5 V, ID = 2.0 A
„ Max rDS(on) = 49 mat VGS = 1.8 V, ID = 1.0 A
„ Max rDS(on) = 55 mat VGS = 1.5 V, ID = 1.0 A
„ Occupies only 1.5 mm2 of PCB area.Less than 50% of the
area of 2 x 2 BGA
„ Ultra-thin package: less than 0.65 mm height when mounted
to PCB
„ HBM ESD protection level > 2200V (Note3)
„ RoHS Compliant
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench® process
with state of the art "fine pitch" WLCSP packaging process, the
FDZ192NZ minimizes both PCB space and rDS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low rDS(on).
Applications
„ Battery management
„ Load switch
„ Battery protection
PIN1
S
SG
DS
D
BOTTOM
TOP
WL-CSP 1x1.5 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25°C
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
5.3
15
1.9
0.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
65
133
°C/W
Device Marking
8
Device
FDZ192NZ
Package
WL-CSP 1x1.5 Thin
Reel Size
7”
Tape Width
8 mm
Quantity
5000 units
©2010 Fairchild Semiconductor Corporation
FDZ192NZ Rev.C1
1
www.fairchildsemi.com












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