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零件编号 | FDZ192NZ | ||
描述 | N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
January 2010
FDZ192NZ
N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
20 V, 5.3 A, 39 mΩ
Features
Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 2.0 A
Max rDS(on) = 43 mΩ at VGS = 2.5 V, ID = 2.0 A
Max rDS(on) = 49 mΩ at VGS = 1.8 V, ID = 1.0 A
Max rDS(on) = 55 mΩ at VGS = 1.5 V, ID = 1.0 A
Occupies only 1.5 mm2 of PCB area.Less than 50% of the
area of 2 x 2 BGA
Ultra-thin package: less than 0.65 mm height when mounted
to PCB
HBM ESD protection level > 2200V (Note3)
RoHS Compliant
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench® process
with state of the art "fine pitch" WLCSP packaging process, the
FDZ192NZ minimizes both PCB space and rDS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low rDS(on).
Applications
Battery management
Load switch
Battery protection
PIN1
S
SG
DS
D
BOTTOM
TOP
WL-CSP 1x1.5 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25°C
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
5.3
15
1.9
0.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
65
133
°C/W
Device Marking
8
Device
FDZ192NZ
Package
WL-CSP 1x1.5 Thin
Reel Size
7”
Tape Width
8 mm
Quantity
5000 units
©2010 Fairchild Semiconductor Corporation
FDZ192NZ Rev.C1
1
www.fairchildsemi.com
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页数 | 7 页 | ||
下载 | [ FDZ192NZ.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
FDZ192NZ | N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET | Fairchild Semiconductor |
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