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零件编号 | CEM8311 | ||
描述 | Dual P-Channel Enhancement Mode Field Effect Transistor | ||
制造商 | CET | ||
LOGO | |||
1 Page
CEM8311
Dual P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -7.9A, RDS(ON) = 20mΩ @VGS = -10V.
RDS(ON) = 33mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 D1 D2 D2
876 5
5
SO-8
1
123 4
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID -7.9
IDM -31.6
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
Specification and data are subject to change without notice .
5 - 147
Rev 1. 2006.January
http://www.cet-mos.com
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页数 | 4 页 | ||
下载 | [ CEM8311.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
CEM8311 | Dual P-Channel Enhancement Mode Field Effect Transistor | CET |
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