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PDF ( 数据手册 , 数据表 ) CEF05N6

零件编号 CEF05N6
描述 N-Channel Enhancement Mode Field Effect Transistor
制造商 CET
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CEF05N6 数据手册, 描述, 功能
CEF05N6
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 5A, RDS(ON) = 2.4@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220F full-pak for through hole.
D
G
D
S
CEF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
650
±30
5
20
35
0.28
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3.6
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 3. 2009.Jun.
http://www.cet-mos.com












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