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PDF ( 数据手册 , 数据表 ) CEB01N65

零件编号 CEB01N65
描述 N-Channel Enhancement Mode Field Effect Transistor
制造商 CET
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CEB01N65 数据手册, 描述, 功能
CEP01N65/CEB01N65
CEF01N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP01N65
CEB01N65
CEF01N65
VDSS
650V
650V
650V
RDS(ON)
10.5Ω
10.5Ω
10.5Ω
ID
1.3A
1.3A
1.3A d
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
DG
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
650
±30
1.3
5.2
41
0.33
1.3 d
5.2 d
27
0.22
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3
62.5
4.5
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2007.March
http://www.cet-mos.com












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