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PDF ( 数据手册 , 数据表 ) IR21094S

零件编号 IR21094S
描述 HALF-BRIDGE DRIVER
制造商 International Rectifier
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IR21094S 数据手册, 描述, 功能
Data Sheet No. PD60163-U
IR2109(4) (S) & (PbF)
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
High side output in phase with IN input
Logic and power ground +/- 5V offset.
Internal 540ns dead-time, and programmable
up to 5us with one external RDT resistor (IR21094)
Lower di/dt gate driver for better noise immunity
Shut down input turns off both channels.
Available in Lead-Free
HALF-BRIDGE DRIVER
Product Summary
VOFFSET
600V max.
IO+/-
120 mA / 250 mA
VOUT
10 - 20V
ton/off (typ.)
750 & 200 ns
Dead Time
540 ns
(programmable up to 5uS for IR21094)
Packages
Description
The IR2109(4)(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output,
down to 3.3V logic. The output drivers feature a high
8 Lead SOIC
14 Lead SOIC
14 Lead PDIP
8 Lead PDIP
pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to
drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
VCC
VCC
VB
IN IN HO
SD SD VS
COM
LO
IR2109
(Refer to Lead Assignments for correct
configuration). This/These diagram(s) show
electrical connections only. Please refer to our
Application Notes and DesignTips for proper
circuit board layout.
up to 600V
TO
LOAD
HO
VCC
VCC
VB
IN IN VS
SD SD
DT
VSS
RDT
VSS COM
LO
IR21094
up to 600V
TO
LOAD
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1
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IR21094S pdf, 数据表
IR2109(4) (S) & (PbF)
1300
1100
900 M ax
700 T yp.
500
-50
-25
0 25 50 75
Temperature (oC)
100 125
Figure 6A. Turn-on Propagation Delay
vs. Temperature
1300
1100
Max.
900
T yp.
700
500
10
12 14 16 18
VBIAS Supply Voltage (V)
Figure 6B. Turn-on Propagation Delay
vs. Supply Voltage
20
500
400
300
M ax.
200
T yp.
100
0
-50
-25
0 25 50 75
Temperature (oC)
100 125
Figure 7A. Turn-off Propagation Delay
vs. Temperature
500
400
M ax.
300
T yp.
200
100
0
10 12 14 16 18
VBIAS Supply Voltage (V)
Figure 7B. Turn-off Propagation Delay
vs. Supply Voltage
20
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IR21094S equivalent, schematic
IR2109(4) (S) & (PbF)
60
50
40
30
M ax.
20
10
T yp.
0
10
12 14 16 18
VCC Supply Voltage (V)
20
Figure 21B. Logic “1” Input Current
vs. Supply Voltage
5
4
3
M ax.
2
1
0
-50
-25
0 25 50 75
Temperature (oC)
100 125
Figure 22A. Logic “0” Input Current
vs. Temperature
5
4
3
M ax.
2
1
0
10 12 14 16 18 20
VCC Supply Voltage (V)
Figure 22B. Logic “0” Input Currentt
vs. Supply Voltage
12
11
10 Max.
9 T yp.
M in.
8
7
-50
-25
0 25 50 75
Temperature (oC)
100 125
Figure 23. VCC Undervoltage Threshold (+)
vs. Temperature
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