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零件编号 | A3R1GE30JBF | ||
描述 | 1Gb DDRII Synchronous DRAM | ||
制造商 | Zentel | ||
LOGO | |||
1 Page
A3R1GE30JBF
A3R1GE40JBF
1Gb DDRII Synchronous DRAM
1Gb DDRII SDRAM Specification
A3R1GE30JBF
A3R1GE40JBF
Zentel Electronics Corp.
Revision 1.0
Dec., 2014
A3R1GE30JBF
A3R1GE40JBF
1Gb DDRII Synchronous DRAM
AC Overshoot / Undershoot Specification
Parameter
Maximum peak amplitude allowed for
overshoot
Maximum peak amplitude allowed for
undershoot
Maximum overshoot area above VDD
DDR2-1066
DDR2-800
Maximum undershoot area below VSS
DDR2-1066
DDR2-800
Maximum peak amplitude allowed for
overshoot
Maximum peak amplitude allowed for
undershoot
Maximum overshoot area above VDD
DDR2-1066
DDR2-800
Maximum undershoot area below VSS
DDR2-1066
DDR2-800
Maximum peak amplitude allowed for
overshoot
Maximum peak amplitude allowed for
undershoot
Maximum overshoot area above VDD
DDR2-1066
DDR2-800
Maximum undershoot area below VSS
DDR2-1066
DDR2-800
Pins
Command,
Address
CKE, ODT
Specification
0.5
0.5
CK, /CK
0.5
0.66
0.5
0.66
0.5
0.5
0.19
0.23
0.19
0.23
DQ, DQS, /DQS, 0.5
UDQS, /UDQS,
LDQS, /LDQS,
RDQS, /RDQS,
DM, UDM, LDM
0.5
0.19
0.23
0.19
0.23
Unit
V
V
V-ns
V-ns
V-ns
V-ns
V
V
V-ns
V-ns
V-ns
V-ns
V
V
V-ns
V-ns
V-ns
V-ns
Revision 1.0
Page 7 / 72
Dec., 2014
A3R1GE30JBF
A3R1GE40JBF
1Gb DDRII Synchronous DRAM
14.tRPall for a Precharge All command is equal to tRP+1xtCK, where tRP is value for a single bank precharge,
Which are shown in this table.
Revision 1.0
Page 15 / 72
Dec., 2014
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页数 | 30 页 | ||
下载 | [ A3R1GE30JBF.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
A3R1GE30JBF | 1Gb DDRII Synchronous DRAM | Zentel |
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