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零件编号 | PH1330AL | ||
描述 | N-channel MOSFET | ||
制造商 | NXP Semiconductors | ||
LOGO | |||
1 Page
PH1330AL
N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK
Rev. 01 — 14 October 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is
designed for computing customers only
1.2 Features and benefits
Advanced TrenchMOS provides low
RDSon and low gate charge
High efficiency gains in switching
power convertors
Improved mechanical and thermal
characteristics
LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
For computing customers only
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 100 A; Vsup ≤ 30 V;
RGS = 50 Ω; unclamped
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 4.5 V; ID = 25 A;
VDS = 12 V;
see Figure 13 and 14
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 15 A;
Tj = 25 °C; see Figure 17
[1] Continuous current is limited by package.
[1]
Min Typ Max Unit
- - 30 V
- - 100 A
- - 121 W
-55 -
150 °C
- - 383 mJ
- 9.3 - nC
- 46.6 - nC
- - 1.8 mΩ
- 1.04 1.3 mΩ
NXP Semiconductors
PH1330AL
N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK
10-1
ID
(A)
10-2
003aab271
min typ max
10-3
10-4
10-5
10-6
0 1 2 VGS (V) 3
2
a
1.5
03aa27
1
0.5
0
−60
0
60 120 Tj (°C) 180
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 13. Gate charge waveform definitions
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
10
VGS
(V)
8
003aad150
6
VDS = 12V
4
2
0
0 25 50 75 100
QG (nC)
Fig 14. Gate-source voltage as a function of gate
charge; typical values
PH1330AL_1
Product data sheet
Rev. 01 — 14 October 2009
© NXP B.V. 2009. All rights reserved.
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页数 | 13 页 | ||
下载 | [ PH1330AL.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
PH1330AL | N-channel MOSFET | NXP Semiconductors |
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