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PDF ( 数据手册 , 数据表 ) PH1330AL

零件编号 PH1330AL
描述 N-channel MOSFET
制造商 NXP Semiconductors
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PH1330AL 数据手册, 描述, 功能
PH1330AL
N-channel 30 V 1.3 mlogic level MOSFET in LFPAK
Rev. 01 — 14 October 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is
designed for computing customers only
1.2 Features and benefits
„ Advanced TrenchMOS provides low
RDSon and low gate charge
„ High efficiency gains in switching
power convertors
„ Improved mechanical and thermal
characteristics
„ LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
„ For computing customers only
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj 25 °C; Tj 150 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 100 A; Vsup 30 V;
RGS = 50 ; unclamped
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 4.5 V; ID = 25 A;
VDS = 12 V;
see Figure 13 and 14
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 15 A;
Tj = 25 °C; see Figure 17
[1] Continuous current is limited by package.
[1]
Min Typ Max Unit
- - 30 V
- - 100 A
- - 121 W
-55 -
150 °C
- - 383 mJ
- 9.3 - nC
- 46.6 - nC
- - 1.8 m
- 1.04 1.3 m







PH1330AL pdf, 数据表
NXP Semiconductors
PH1330AL
N-channel 30 V 1.3 mlogic level MOSFET in LFPAK
10-1
ID
(A)
10-2
003aab271
min typ max
10-3
10-4
10-5
10-6
0 1 2 VGS (V) 3
2
a
1.5
03aa27
1
0.5
0
60
0
60 120 Tj (°C) 180
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 13. Gate charge waveform definitions
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
10
VGS
(V)
8
003aad150
6
VDS = 12V
4
2
0
0 25 50 75 100
QG (nC)
Fig 14. Gate-source voltage as a function of gate
charge; typical values
PH1330AL_1
Product data sheet
Rev. 01 — 14 October 2009
© NXP B.V. 2009. All rights reserved.
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