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零件编号 | NGB18N40CLB | ||
描述 | Ignition IGBT | ||
制造商 | ON Semiconductor | ||
LOGO | |||
1 Page
NGB18N40CLB,
NGB18N40ACLB
Ignition IGBT
18 Amps, 400 Volts
N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Integrated Gate−Emitter Resistor (RGE)
• Emitter Ballasting for Short−Circuit Capability
• These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
VCES 430 VDC
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
ESD (Human Body Model)
R = 1500 W, C = 100 pF
VCER 430 VDC
VGE
18 VDC
IC 18 ADC
50 AAC
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF ESD
800
V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 115 W
0.77 W/°C
Operating and Storage Temperature Range TJ, Tstg −55 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
18 AMPS, 400 VOLTS
VCE(on) 3 2.0 V @
IC = 10 A, VGE . 4.5 V
C
G
RGE
E
D2PAK
CASE 418B
STYLE 4
MARKING DIAGRAM
4
Collector
GB
18N40xG
AYWW
13
Gate 2
Emitter
Collector
GB18N40x
x
A
Y
WW
G
= Device Code
= B or A
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NGB18N40CLBT4G D2PAK 800/Tape & Reel
NGB18N40ACLBT4G (Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 5
1
Publication Order Number:
NGB18N40CLB/D
NGB18N40CLB, NGB18N40ACLB
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE L
C
E
−B−
V
W
4
123
S
−T−
SEATING
PLANE
G
K
D 3 PL
0.13 (0.005) M T B M
A
W
J
H
VARIABLE
CONFIGURATION
ZONE
L
M
R
M
N
L
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
INCHES
DIM MIN MAX
A 0.340 0.380
B 0.380 0.405
C 0.160 0.190
D 0.020 0.035
E 0.045 0.055
F 0.310 0.350
G 0.100 BSC
H 0.080 0.110
J 0.018 0.025
K 0.090 0.110
L 0.052 0.072
M 0.280 0.320
N 0.197 REF
P 0.079 REF
R 0.039 REF
S 0.575 0.625
V 0.045 0.055
MILLIMETERS
MIN MAX
8.64 9.65
9.65 10.29
4.06 4.83
0.51 0.89
1.14 1.40
7.87 8.89
2.54 BSC
2.03 2.79
0.46 0.64
2.29 2.79
1.32 1.83
7.11 8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14 1.40
STYLE 4:
PIN 1. GATE
2. COLLECTOR
P
3. EMITTER
4. COLLECTOR
U
L
M
F
VIEW W−W
1
F
VIEW W−W
2
SOLDERING FOOTPRINT*
10.49
F
VIEW W−W
3
16.155
8.38
2X
1.016
2X
3.504
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
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页数 | 9 页 | ||
下载 | [ NGB18N40CLB.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
NGB18N40CLB | Ignition IGBT | ON Semiconductor |
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