|
|
零件编号 | NVB25P06 | ||
描述 | Power MOSFET ( Transistor ) | ||
制造商 | ON Semiconductor | ||
LOGO | |||
1 Page
NTB25P06, NVB25P06
Power MOSFET
−60 V, −27.5 A, P−Channel D2PAK
Designed for low voltage, high speed switching applications and to
withstand high energy in the avalanche and commutation modes.
Features
• AEC Q101 Qualified − NVB25P06
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• PWM Motor Controls
• Power Supplies
• Converters
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage
Temperature Range
VDSS
−60
V
VGS
VGSM
"15
"20
V
Vpk
ID
IDM
PD
TJ, Tstg
27.5
80
120
−55 to
+175
A
Apk
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 V, VGS = 10 V,
IL(pk) = 20 A, L = 3 mH, RG = 25 W)
EAS 600 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
°C/W
1.25
46.8
63.2
Maximum Lead Temperature for Soldering
Purposes, (1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1″ pad size
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu Area 0.412 in2).
http://onsemi.com
V(BR)DSS
−60 V
RDS(on) TYP
65 mW @ −10 V
ID MAX
−27.5 A
P−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
4
2
1
3
D2PAK
CASE 418B
NTB
25P06G
AYWW
Drain
Gate
Source
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NTB25P06T4G
D2PAK 800 / Tape & Reel
(Pb−Free)
NVB25P06T4G
D2PAK 800 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 4
1
Publication Order Number:
NTB25P06/D
|
|||
页数 | 6 页 | ||
下载 | [ NVB25P06.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
NVB25P06 | Power MOSFET ( Transistor ) | ON Semiconductor |
NVB25P06T4G | Power MOSFET ( Transistor ) | ON Semiconductor |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |