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PDF ( 数据手册 , 数据表 ) NVD5863NL

零件编号 NVD5863NL
描述 Power MOSFET ( Transistor )
制造商 ON Semiconductor
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NVD5863NL 数据手册, 描述, 功能
NVD5863NL
Power MOSFET
60 V, 7.1 mW, 82 A, Single NChannel
Features
Low RDS(on) to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AECQ101 Qualified
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain Cur-
rent RqJC (Note 1)
Power Dissipation
(Note 1)
RqJC
Continuous Drain Cur-
rent RqJA (Notes 1 & 2)
Power
(Notes
Dissipation
1 & 2)
RqJA
Pulsed Drain Current
Current Limited by
Package (Note 3)
TC = 25°C
Steady TC = 100°C
State TC = 25°C
TC = 100°C
TA = 25°C
Steady TA = 100°C
State TA = 25°C
TA = 100°C
TA = 25°C, tp = 10 ms
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
IDM
IDmaxpkg
60
"20
82
58
96
48
14.9
11.5
3.1
1.6
500
60
V
V
A
W
A
W
A
A
Operating Junction and Storage Temperature
TJ, Tstg
55 to
175
°C
Source Current (Body Diode)
IS 82 A
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 23 A, L = 1.0 mH, RG = 25 W)
EAS 265 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoCase Steady State (Drain)
RqJC
1.6 °C/W
JunctiontoAmbient Steady State (Note 2)
RqJA
48
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as 1
second are higher but are dependent on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
60 V
RDS(on)
7.1 mW @ 10 V
9.0 mW @ 4.5 V
D
ID
82 A
NChannel
G
S
4
12
3
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y
WW
5863L
G
= Year
= Work Week
= Device Code
= PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
December, 2011 Rev. 1
1
Publication Order Number:
NVD5863NL/D












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