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零件编号 | XL1000-BD | ||
描述 | Low Noise Amplifier | ||
制造商 | MA-COM | ||
LOGO | |||
1 Page
XL1000-BD
Low Noise Amplifier
20.0-40.0 GHz
Features
Self Bias Architecture
Small Size
3.0 or 5.0 V Operation
20.0 dB Small Signal Gain
2.0 dB Noise Figure
+9.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Noise Figure
Testing
100% Visual Inspection to MIL-STD-883 Method
2010
RoHS* Compliant and 260°C Reflow Compatible
Description
M/A-COM Tech’s three stage 20.0-40.0 GHz GaAs
MMIC low noise amplifier has a small signal gain of
20.0 dB with a noise figure of 2.0 dB across the
band. This MMIC uses M/A-COM Tech’s GaAs
PHEMT device model technology, and is based
upon electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Chip Device Layout
Rev. V1
Absolute Maximum Ratings
Parameter
Absolute Max.
Supply Voltage (Vd)
Supply Current (Id)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)1
+7.0 VDC
70 mA
+12 dBm
-65 °C to +165 °C
-55 °C to +85 °C
+175 °C
1. Channel temperature directly affects a device's MTTF. Chan-
nel temperature should be kept as low as possible to maximize
lifetime.
Ordering Information
Part Number
Package
XL1000-BD-000V
“V” - vacuum release
gel paks
XL1000-BD-EV1
evaluation module
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
XL1000-BD
Low Noise Amplifier
20.0-40.0 GHz
App Note [1] Biasing - As shown in the bonding diagram,
this device operates using a self-biased architecture and
only requires one drain bias. Bias is nominally Vd=3V,
I=35mA or Vd=5V, I=50mA.
App Note [2] Bias Arrangement - Each DC pad (Vd)
needs to have DC bypass capacitance (~100-200 pF) as
close to the device as possible. Additional DC bypass ca-
pacitance (~0.01 uF) is also recommended.
Rev. V1
8
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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页数 | 9 页 | ||
下载 | [ XL1000-BD.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
XL1000-BD | Low Noise Amplifier | MA-COM |
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