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PDF ( 数据手册 , 数据表 ) PH2530AL

零件编号 PH2530AL
描述 N-channel TrenchMOS logic level FET
制造商 NXP Semiconductors
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PH2530AL 数据手册, 描述, 功能
PH2530AL
N-channel TrenchMOS logic level FET
Rev. 05 — 14 January 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing and consumer applications.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for logic level gate drive
sources
1.3 Applications
„ Consumer applications
„ Desktop Voltage Regulator Module
(VRM)
„ Notebook Voltage Regulator Module
(VRM)
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj 25 °C; Tj 175 °C
- - 30 V
ID drain current
Tmb = 25 °C; VGS = 10 V;
[1] -
-
100 A
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 88 W
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 4.5 V; ID = 10 A;
VDS = 12 V; see Figure 14
and 15
- 6.5 - nC
- 27 - nC
Static characteristics
RDSon drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 25 °C
- 1.79 2.4 m
[1] Continuous current is limited by package.







PH2530AL pdf, 数据表
NXP Semiconductors
PH2530AL
N-channel TrenchMOS logic level FET
2
a
03aa27
1.5
1
0.5
0
60
0
60 120 Tj (°C) 180
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aac662
10
VGS
(V)
8
VDS = 19 (V)
VDS = 12 (V)
6
Fig 14. Gate charge waveform definitions
5000
C
(pF)
4000
Ciss
3000
Coss
003aac660
4 2000
Crss
2 1000
0
0 20 40 60 80
QG (nC)
0
10-1 1 10 VDS (V) 102
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PH2530AL_5
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 05 — 14 January 2010
© NXP B.V. 2010. All rights reserved.
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