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零件编号 | PH2530AL | ||
描述 | N-channel TrenchMOS logic level FET | ||
制造商 | NXP Semiconductors | ||
LOGO | |||
1 Page
PH2530AL
N-channel TrenchMOS logic level FET
Rev. 05 — 14 January 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing and consumer applications.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
Consumer applications
Desktop Voltage Regulator Module
(VRM)
Notebook Voltage Regulator Module
(VRM)
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 30 V
ID drain current
Tmb = 25 °C; VGS = 10 V;
[1] -
-
100 A
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 88 W
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 4.5 V; ID = 10 A;
VDS = 12 V; see Figure 14
and 15
- 6.5 - nC
- 27 - nC
Static characteristics
RDSon drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 25 °C
- 1.79 2.4 mΩ
[1] Continuous current is limited by package.
NXP Semiconductors
PH2530AL
N-channel TrenchMOS logic level FET
2
a
03aa27
1.5
1
0.5
0
−60
0
60 120 Tj (°C) 180
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aac662
10
VGS
(V)
8
VDS = 19 (V)
VDS = 12 (V)
6
Fig 14. Gate charge waveform definitions
5000
C
(pF)
4000
Ciss
3000
Coss
003aac660
4 2000
Crss
2 1000
0
0 20 40 60 80
QG (nC)
0
10-1 1 10 VDS (V) 102
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PH2530AL_5
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 05 — 14 January 2010
© NXP B.V. 2010. All rights reserved.
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页数 | 14 页 | ||
下载 | [ PH2530AL.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
PH2530AL | N-channel TrenchMOS logic level FET | NXP Semiconductors |
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