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PDF ( 数据手册 , 数据表 ) L9012SLT1G

零件编号 L9012SLT1G
描述 General Purpose Transistors
制造商 Leshan Radio Company
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L9012SLT1G 数据手册, 描述, 功能
General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
PNP Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
L9012PLT1G
Series
S-L9012PLT1G
Series
Device
L9012PLT1G
S-L9012PLT1G
L9012PLT3G
S-L9012PLT3G
L9012QLT1G
S-L9012QLT1G
L9012QLT3G
S-L9012QLT3G
L9012RLT1G
S-L9012RLT1G
L9012RLT3G
L9012RLT3G
L9012SLT1G
S-L9012SLT1G
L9012SLT3G
S-L9012SLT3G
Marking
12P
Shipping
3000/Tape&Reel
12P
12Q
10000/Tape&Reel
3000/Tape&Reel
12Q 10000/Tape&Reel
12R 3000/Tape&Reel
12R 10000/Tape&Reel
12S 3000/Tape&Reel
12S 3000/Tape&Reel
12S 10000/Tape&Reel
3
1
2
SOT-23 (TO-236AB)
1
BASE
3
COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
2
EMITTER
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
-20
-40
-5
-500
V
V
V
mAdc
Characteristic
Total Device Dissipation FR-5 Board, (1)
TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θ JA
PD
R θJA
Tj ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/oC
oC/W
mW
mW/oC
oC/W
oC
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol Min Typ
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=-1.0mA)
Emitter-Base Breakdown Voltage
(IE=-100µ A)
Collector-Base Breakdown Voltage
(IC=-100µ A)
Collector Cutoff Current (VCB=-35V)
V(BR)CEO
V(BR)EBO
V(BR)CBO
I CBO
-20
-5
-40
-
-
-
-
-
Emitter Cutoff Current (VBE=-4V)
IEBO
Max
-
-
-
-150
-150
Unit
V
V
V
nA
nA
Rev.O 1/2












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