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PDF ( 数据手册 , 数据表 ) K4091

零件编号 K4091
描述 MOS FIELD EFFECT TRANSISTOR
制造商 Renesas
LOGO Renesas LOGO 


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K4091 数据手册, 描述, 功能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4091
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4091 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 13.0 mΩ MAX. (VGS = 10 V, ID = 15 A)
RDS(on)2 = 21 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
Low gate to drain charge
QGD = 2.2 nC TYP. (VDD = 15 V, ID = 30 A)
4.5 V drive available
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
2SK4091(1)-S27-AY Note
2SK4091-ZK-E1-AY Note
2SK4091-ZK-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tube 75 p/tube
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode).
PACKAGE
TO-251 (MP-3-b) typ. 0.34 g
TO-252 (MP-3ZK) typ. 0.27 g
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
30
±20
±30
±110
21
1.0
150
55 to +150
18
32.4
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 0 V, L = 0.1 mH
(TO-251)
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18635EJ1V0DS00 (1st edition)
Date Published February 2007 NS CP(K)
Printed in Japan
2007












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