|
|
零件编号 | FQD12N20LTM_F085 | ||
描述 | 200V Logic Level N-Channel MOSFET | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
June 2010
FQD12N20LTM_F085
200V Logic Level N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, motor control.
Features
• 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
opration from logic drivers
• Qualified to AEC Q101
• RoHS Compliant
D
GS
D-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
IAR
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Avalanche Current
(Note 1)
(Note 1)
dv/dt
PD
TJ, TSTG
TL
Peak Diode Recovery dv/dt
(Note 2)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
!
"
!"
!
"
"
!
FQD12N20LTM_F085
200
9.0
5.7
36
± 20
9.0
5.5
2.5
55
0.44
-55 to +150
300
Units
V
A
A
A
V
A
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2010 Fairchild Semiconductor Corporation
FQD12N20LTM_F085 Rev. B
1
Typ Max Units
-- 2.27 °C/W
-- 50 °C/W
-- 110 °C/W
www.fairchildsemi.com
Package Dimensions
(0.50)
6.60 ±0.20
5.34 ±0.30
(4.34)
DPAK
(0.50)
2.30 ±0.10
0.50 ±0.10
MAX0.96
2.30TYP
[2.30±0.20]
0.76 ±0.10
2.30TYP
[2.30±0.20]
6.60 ±0.20
(5.34)
(5.04)
(1.50)
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
(2XR0.25)
FQD12N20LTM_F085 Rev. B
0.76 ±0.10
8 www.fairchildsemi.com
|
|||
页数 | 9 页 | ||
下载 | [ FQD12N20LTM_F085.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
FQD12N20LTM_F085 | 200V Logic Level N-Channel MOSFET | Fairchild Semiconductor |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |