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PDF ( 数据手册 , 数据表 ) NP22N055ILE

零件编号 NP22N055ILE
描述 MOS FIELD EFFECT TRANSISTOR
制造商 Renesas
LOGO Renesas LOGO 


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NP22N055ILE 数据手册, 描述, 功能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP22N055HLE, NP22N055ILE, NP22N055SLE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect
Transistors designed for high current switching
applications.
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on)1 = 37 mMAX. (VGS = 10 V, ID = 11 A)
RDS(on)2 = 45 mMAX. (VGS = 5.0 V, ID = 11 A)
Low Ciss : Ciss = 730 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP22N055HLE
NP22N055ILE Note
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
NP22N055SLE
TO-252 (JEDEC) / MP-3ZK
Note Not for new design.
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
Gate to Source Voltage
VGSS
±20
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±22
±55
Total Power Dissipation (TA = 25°C)
PT
1.2
Total Power Dissipation (TC = 25°C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
PT
IAS
EAS
45
14 / 5
19 / 25
Channel Temperature
Tch 175
Storage Temperature
Tstg –55 to +175
V
V
A
A
W
W
A
mJ
°C
°C
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, RG = 25 , VGS = 20 0 V (See Figure 4.)
(TO-252)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
3.33
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14136EJ4V0DS00 (4th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
1999, 2005












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