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PDF ( 数据手册 , 数据表 ) K4150

零件编号 K4150
描述 MOSFET ( Transistor ) - 2SK4150
制造商 Renesas Technology
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K4150 数据手册, 描述, 功能
2SK4150
Silicon N Channel MOS FET
High Speed Power Switching
Features
Capable of 2.5 V gate drive
Low drive current
Low on-resistance
RDS(on) = 4.0 typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C)
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92(1))
321
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
Pch
ch-a
Tch
Tstg
Preliminary Datasheet
REJ03G1909-0300
Rev.3.00
May 27, 2010
D
1. Source
2. Drain
3. Gate
S
Ratings
250
±10
0.4
1.6
0.4
1.6
0.75
166.7
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
C/W
C
C
REJ03G1909-0300 Rev.3.00
May 27, 2010
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