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PDF ( 数据手册 , 数据表 ) 2DD1621T

零件编号 2DD1621T
描述 NPN SURFACE MOUNT TRANSISTOR
制造商 Diodes
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2DD1621T 数据手册, 描述, 功能
2DD1621T
NPN SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Characteristic
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
Operating and Storage Temperature Range
SOT89-3L
3E
COLLECTOR
2,4
C4 2 C
1
BASE
1B
3
TOP VIEW
EMITTER
Schematic and Pin Configuration
Symbol
VCBO
VCEO
VEBO
IC
Value
30
25
6.0
2.0
Unit
V
V
V
A
Symbol
PD
RθJA
TJ, TSTG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Turn On Time
Storage Time
Fall Time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(SAT)
VBE(SAT)
Min
30
25
6.0
200
65
fT
Cobo
ton
tstg
tf
Typ
0.12
0.9
300
16
70
170
25
Max
100
100
400
0.4
1.2
Unit Test Conditions
V IC = 10μA, IE = 0
V IC = 1mA, IB = 0
V IC = 10μA, IC = 0
nA VCB = 20V, IE = 0
nA VEB = 4.0V, IC = 0
VCE = 2.0V, IC = 0.1A
VCE = 2.0V, IC = 1.5A
V IC = 1.5A, IB = 75mA
V IC = 1.5A, IB = 75mA
MHz
VCE = 10V, IC = 50mA,
f = 100MHz
pF VCB = 10V, IE = 0, f = 1MHz
ns
ns
ns
VCE = 12V, VBE = 5V,
IB1 = IB2 = 25mA, IC = 500mA
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
DS31240 Rev. 2 - 2
1 of 4
www.diodes.com
2DD1621T
© Diodes Incorporated












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