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PDF ( 数据手册 , 数据表 ) S-LBAS16WT1G

零件编号 S-LBAS16WT1G
描述 Switching Diode
制造商 Leshan Radio Company
LOGO Leshan Radio Company LOGO 


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S-LBAS16WT1G 数据手册, 描述, 功能
LESHAN RADIO COMPANY, LTD.
Silicon Switching Diode
FEATURE
z We declare that the material of product
compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable.
MAXIMUM RATINGS (TA = 25oC)
Rating
Symbol
Max
Continuous Reverse Voltage
VR 75
Recurrent Peak Forward Current
IR 200
Peak Forward Surge Current
Pulse Width = 10 µs
IFM(surge)
500
Total Power Dissipation, One Diode Loaded
TA = 25°C
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
PD
200
1.6
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
RθJA
0.625
DEVICE MARKING
LBAS16WT1G= A6
Unit
V
mA
mA
mW
mW/°C
°C
Unit
°C/mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
Reverse Current
(VR = 75 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 ) (Figure 1)
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 ) (Figure 2)
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3)
Symbol
VF
IR
CD
trr
QS
VFR
LBAS16WT1G
S-LBAS16WT1G
3
1
2
SC-70
3
CATHODE
1
ANODE
Min Max Unit
mV
— 715
— 855
— 1000
— 1250
µA
— 1.0
— 50
— 30
— 2.0 pF
— 6.0 ns
— 45 PC
— 1.75
V
ORDERING INFORMATION
Device
Marking
LBAS16WT1G
S-LBAS16WT1G
A6
LBAS16WT3G
S-LBAS16WT3G
A6
Shipping
3000/Tape&Reel
10000/Tape&Reel
Rev.A 1/4












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