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零件编号 | STP13N60M2 | ||
描述 | N-channel Power MOSFET | ||
制造商 | STMicroelectronics | ||
LOGO | |||
1 Page
STP13N60M2, STU13N60M2,
STW13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg
Power MOSFETs in TO-220, IPAK and TO-247 packages
Datasheet − production data
TAB
3
2
1
TO-220
TAB
IPAK
3
2
1
3
2
1
TO-247
Figure 1. Internal schematic diagram
, TAB
Features
Order codes VDS @ TJmax RDS(on) max ID
STP13N60M2
STU13N60M2
650 V
0.38 Ω
11 A
STW13N60M2
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
AM15572v1
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STP13N60M2
STU13N60M2
STW13N60M2
Table 1. Device summary
Marking
Package
13N60M2
TO-220
IPAK
TO-247
February 2014
This is information on a product in full production.
DocID023937 Rev 5
Packaging
Tube
1/18
www.st.com
18
Electrical characteristics
STP13N60M2, STU13N60M2, STW13N60M2
Figure 14. Source-drain diode forward
characteristics
VSD (V)
1
TJ=-50°C
AM15720v1
0.9 TJ=25°C
0.8
0.7 TJ=150°C
0.6
Figure 15. Output capacitance stored energy
Eoss(µJ)
AM15721v1
4
3
2
1
0.5
0 2 4 6 8 10 ISD(A)
0
0 100 200 300 400 500 VDS(V)
8/18 DocID023937 Rev 5
Package mechanical data
Dim.
A
A1
b
b1
b2
c
D
E
e
L
L1
L2
∅P
∅R
S
STP13N60M2, STU13N60M2, STW13N60M2
Table 11. TO-247 mechanical data
mm.
Min.
Typ.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
3.55
4.50
5.30
5.45
18.50
5.50
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
16/18
DocID023937 Rev 5
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页数 | 18 页 | ||
下载 | [ STP13N60M2.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
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