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PDF ( 数据手册 , 数据表 ) STP6N60M2

零件编号 STP6N60M2
描述 N-channel Power MOSFET
制造商 STMicroelectronics
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STP6N60M2 数据手册, 描述, 功能
STF6N60M2, STP6N60M2,
STU6N60M2
N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus™ low Qg
Power MOSFET in TO-220FP, TO-220 and IPAK packages
Datasheet - production data
TAB
3
2
1
TO-220FP
TAB
IPAK
3
2
1
3
2
1
TO-220
Figure 1. Internal schematic diagram
, TAB
Features
Order codes
STF6N60M2
STP6N60M2
STU6N60M2
VDS @
TJmax
RDS(on)
max
ID
650 V 1.2 Ω 4.5 A
Extremely low gate charge
Lower RDS(on) x area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
Applications
Switching applications
AM15572v1
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STF6N60M2
STP6N60M2
STU6N60M2
Table 1. Device summary
Marking
Package
6N60M2
TO-220FP
TO-220
IPAK
June 2013
This is information on a product in full production.
DocID024771 Rev 1
Packaging
Tube
1/18
www.st.com







STP6N60M2 pdf, 数据表
Electrical characteristics
STF6N60M2, STP6N60M2, STU6N60M2
Figure 14. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
AM15882v1
1.1
ID=250 µA
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 TJ(°C)
Figure 16. Source-drain diode forward
characteristics
VSD AM15884v1
(V)
1.4
1.2
TJ=-50°C
1
0.8
0.6 TJ=150°C
0.4 TJ=25°C
0.2
0
0 1 2 3 4 ISD(A)
Figure 15. Normalized on-resistance vs
temperature
RDS(on)
(norm)
AM15883v1
2.3 ID=2.2 A
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0 25
50 75 100
TJ(°C)
8/18 DocID024771 Rev 1







STP6N60M2 equivalent, schematic
Package mechanical data
STF6N60M2, STP6N60M2, STU6N60M2
Figure 25. IPAK (TO-251) drawing
0068771_K
16/18
DocID024771 Rev 1










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