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PDF ( 数据手册 , 数据表 ) K882

零件编号 K882
描述 MOSFET ( Transistor ) - 2SK882
制造商 Toshiba
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K882 数据手册, 描述, 功能
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK882
2SK882
FM Tuner, VHF RF Amplifier Applications
Unit: mm
Low reverse transfer capacitance: Crss = 0.025 pF (typ.)
Low noise figure: NF = 1.7dB (typ.)
High power gain: Gps = 28dB (typ.)
Recommend operation voltage: 5~15 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS 20 V
Gate-source voltage
VGS
±5 V
Drain current
ID 30 mA
Drain power dissipation
PD 100 mW
Channel temperature
Tch 125 °C
Storage temperature
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
TOSHIBA
SC-70
2-2E1C
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.006 g (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain-source voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
IGSS
VDS = 0, VGS = ±5 V
VDSX
VGS = −4 V, ID = 100 μA
IDSS
(Note)
VDS = 10 V, VGS = 0
VGS (OFF)
Yfs
Ciss
Crss
Gps
NF
VDS = 10 V, ID = 100 μA
VDS = 10 V, VGS = 0, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, f = 100 MHz (Figure 1)
Note: IDSS classification Y: 3.0~7.0 mA, GR: 6.0~14.0 mA
Min Typ. Max Unit
⎯ ⎯ ±50 nA
20 ⎯ ⎯
V
3 14 mA
⎯ ⎯ −2.5 V
10 mS
3.0 4.3 pF
0.025 0.04 pF
20 28 dB
1.7 3.0 dB
1 2007-11-01












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