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PDF ( 数据手册 , 数据表 ) J507

零件编号 J507
描述 P-Channel MOSFET ( Transistor ) - 2SJ507
制造商 Toshiba
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J507 数据手册, 描述, 功能
2SJ507
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ507
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
l 4 V gate drive
l Low drainsource ON resistance
: RDS (ON) = 0.5 (typ.)
l High forward transfer admittance : |Yfs| = 1.0 S (typ.)
l Low leakage current : IDSS = −100 µA (max) (VDS = 60 V)
l Enhancementmode : Vth = 0.8~2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
60
60
±20
1
3
0.9
249.6
1
0.09
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1C
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to
ambient
Rth (cha)
138 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 339 mH, RG = 25 , IAR = 1 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-09-04












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