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零件编号 | IR2108SPBF | ||
描述 | HALF-BRIDGE DRIVER | ||
制造商 | International Rectifier | ||
LOGO | |||
1 Page
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Data Sheet No. PD60161-R
IR2108(4) (S) & (PbF)
Features
HALF-BRIDGE DRIVER
• Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
Packages
dV/dt immune
8-Lead SOIC
14-Lead SOIC
• Gate drive supply range from 10 to 20V
IR2108S
IR21084S
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
14-Lead PDIP
IR21084
• High side output in phase with HIN input
8-Lead PDIP
• Low side output out of phase with LIN input
IR2108
• Logic and power ground +/- 5V offset.
• Internal 540ns dead-time, and
programmable up to 5us with one
2106/2301//2108//2109/2302/2304 Feature Comparison
external RDT resistor (IR21084)
• Lower di/dt gate driver for better
noise immunity
• Available in Lead-Free
Description
The IR2108(4)(S) are high voltage, high speed
power MOSFET and IGBT drivers with depen-
dent high and low side referenced output
channels. Proprietary HVIC and latch immune
Part
2106/2301
21064
2108
21084
2109/2302
21094
2304
Input
logic
HIN/LIN
HIN/LIN
IN/SD
HIN/LIN
Cross-
conduction
prevention
logic
no
yes
yes
yes
Dead-Time
none
Internal 540ns
Programmable 0.54~5 µs
Internal 540ns
Programmable 0.54~5 µs
Internal 100ns
Ground Pins
COM
VSS/COM
COM
VSS/COM
COM
VSS/COM
COM
CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS
or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for
minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or
IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
VCC
VCC
VB
HIN HIN HO
LIN LIN VS
COM
LO
up to 600V
TO
LOAD
IR2108
(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to our
Application Notes and DesignTips for proper
circuit board layout.
VCC
HIN
LIN
V SS
HO
VCC
VB
HIN VS
LIN
DT
RDT
VSS COM
LO
IR21084
up to 600V
TO
LOAD
www.irf.com
1
IR2108(4) (S) & (PbF)
500
400
300
200 Max.
100 Typ.
0
-50 -25
0 25 50 75 100 125
Temperature (oC)
Figure 6A.Turn-on Rise Tim e
vs. Tem perature
500
400
300 Max.
200
100
T yp.
0
10 12 14 16 18
VBIAS Supply Voltage (V)
Figure 6B. Turn-on Rise Time
vs. Supply Voltage
20
200
150
100
Max.
50
T yp.
0
-50 -25
0 25 50 75 100 125
Temperature (oC)
Figure 7A. Turn-off Fall Tim e
vs. Tem perature
200
150
100 Max.
50 T yp.
0
10 12 14 16 18
VBIAS Supply Voltage (V)
Figure 7B. Turn-off Fall Tim e
vs. Supply Voltage
20
8 www.irf.com
IR2108(4) (S) & (PbF)
600
500
400
300
200
100
T yp.
Mi n.
0
10 12 14 16 18
VBIAS Supply Voltage (V)
20
Figure 23B. Output Sink Current
vs. Supply Voltage
0
-2
-4 T yp.
-6
-8
-10
10
12 14 16 18
VBS Flouting Supply Voltage (V)
20
Figure 24. Maxim um Vs Negative Offset
vs. Supply Voltage
140
120
100
80 140V
70V
60 0V
40
20
1
10 100 1000
Frequency (KHz)
Figure 25. IR2108 vs. Frequency (IRFBC20),
:Rgate=33 , VCC=15V
140
120
100
80
60
40
20
1
140V
70V
0V
10 100
Frequency (KHz)
Figure 26. IR2108 vs. Frequency(IRFBC30),
:Rgate=22 , VCC=15V
1000
16 www.irf.com
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页数 | 23 页 | ||
下载 | [ IR2108SPBF.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
IR2108SPBF | HALF-BRIDGE DRIVER | International Rectifier |
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